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Nobel Lecture: Growth of GaN on sapphire via low-temperature deposited buffer layer and realization of
p
-type GaN by Mg doping followed by low-energy electron beam irradiation
Nobel Lecture: Growth of GaN on sapphire via low-temperature deposited buffer layer and realization of
p
-type GaN by Mg doping followed by low-energy electron beam irradiation
Plasma Physics Reports
4
(2016)
, 37-50
