Search within
Our Events & News
Nobel Lecture: Growth of GaN on sapphire via low-temperature deposited buffer layer and realization of
p
-type GaN by Mg doping followed by low-energy electron beam irradiation
Nobel Lecture: Growth of GaN on sapphire via low-temperature deposited buffer layer and realization of
p
-type GaN by Mg doping followed by low-energy electron beam irradiation
Plasma Physics Reports
4
(2016)
, 37-50
